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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 FEATURES TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.15 W (Tamb=25) 1. 0 2. 4 1. 3 Collector current 0.2 A ICM: Collector-base voltage 50 V V (BR) CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE (sat) VBE (sat) 2. 9 1. 9 0. 95 0. 95 Unit: mm unless otherwise specified) Test conditions MIN 50 50 6 0.1 0.1 150 50 0.3 1 180 V V MHz 800 MAX UNIT V V V IC = 100 A, IE=0 IC = 100 A, IB=0 IE= 100 A, IC=0 VCB= 50 V , IE=0 VEB= 6V , IC=0 VCE= 6V, IC= 1mA VCE= 6V, IC= 0.1mA IC=100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 6V, IC= 10mA VCE=6V, IE=0, f=1MHz VCE=6V,IE=-0.1mA, f=1KHz, RG=2K 0. 4 A A fT Cob NF 4 15 pF dB CLASSIFICATION OF hFE(1) Rank Range Marking E 150~300 LE F 250~500 LF G 400~800 LG |
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